Interfacial Conductive Pathway Enabled Self-Rectifying Ferroelectric Memristor for Neuromorphic Applications.
- DOI
- 10.1021/acs.nanolett.6c01429
- Published
- 2026 Jun 3
- Container
- Nano letters
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.6c01429,
title = {Interfacial Conductive Pathway Enabled Self-Rectifying Ferroelectric Memristor for Neuromorphic Applications.},
author = {Cheng J and Yan Y and Li X and Ge H and Li X and Liu C and Minari T and Liu X and Zhang L and Sun Q},
year = {2026},
journal = {Nano letters},
doi = {10.1021/acs.nanolett.6c01429},
url = {https://doi.org/10.1021/acs.nanolett.6c01429}
}RIS
TY - JOUR TI - Interfacial Conductive Pathway Enabled Self-Rectifying Ferroelectric Memristor for Neuromorphic Applications. AU - Cheng J AU - Yan Y AU - Li X AU - Ge H AU - Li X AU - Liu C AU - Minari T AU - Liu X AU - Zhang L AU - Sun Q PY - 2026 JO - Nano letters DO - 10.1021/acs.nanolett.6c01429 UR - https://doi.org/10.1021/acs.nanolett.6c01429 ER -
APA
J, C., Y, Y., X, L., H, G., X, L., C, L., T, M., X, L., L, Z., & Q, S. (2026). Interfacial Conductive Pathway Enabled Self-Rectifying Ferroelectric Memristor for Neuromorphic Applications.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c01429
Source records
- pubmed · retrieved 2026-09-26T16:27:00.698Z