Defect-Engineered Scaling of Lead-Free Ferroelectrics with Ultra-Low-Voltage Switching.

Ghanbari R, Wang J, Kp H, Shi Z, Khandelwal A, Koons K, Rodrigues E, Zhou T, Holt M, Muller DA, Hwang HY, Xu R

Open source

DOI
10.1021/acs.nanolett.6c01514
Published
2026 Jul 29
Container
Nano letters
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acs.nanolett.6c01514,
  title = {Defect-Engineered Scaling of Lead-Free Ferroelectrics with Ultra-Low-Voltage Switching.},
  author = {Ghanbari R and Wang J and Kp H and Shi Z and Khandelwal A and Koons K and Rodrigues E and Zhou T and Holt M and Muller DA and Hwang HY and Xu R},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c01514},
  url = {https://doi.org/10.1021/acs.nanolett.6c01514}
}

RIS

TY  - JOUR
TI  - Defect-Engineered Scaling of Lead-Free Ferroelectrics with Ultra-Low-Voltage Switching.
AU  - Ghanbari R
AU  - Wang J
AU  - Kp H
AU  - Shi Z
AU  - Khandelwal A
AU  - Koons K
AU  - Rodrigues E
AU  - Zhou T
AU  - Holt M
AU  - Muller DA
AU  - Hwang HY
AU  - Xu R
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c01514
UR  - https://doi.org/10.1021/acs.nanolett.6c01514
ER  - 

APA

R, G., J, W., H, K., Z, S., A, K., K, K., E, R., T, Z., M, H., DA, M., HY, H., & R, X. (2026). Defect-Engineered Scaling of Lead-Free Ferroelectrics with Ultra-Low-Voltage Switching.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c01514

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