Large Magnetoresistance in a Si-Based Double-Tunnel Junction with Purely Organic Radical Molecules.

Bera J, Basu TS, Wolf J, Zhang H, Marumoto K, Wakayama Y, Herrmann C, Huhn T, Hayakawa R

Open source

DOI
10.1021/acs.nanolett.6c01526
Published
2026 Jul 1
Container
Nano letters
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acs.nanolett.6c01526,
  title = {Large Magnetoresistance in a Si-Based Double-Tunnel Junction with Purely Organic Radical Molecules.},
  author = {Bera J and Basu TS and Wolf J and Zhang H and Marumoto K and Wakayama Y and Herrmann C and Huhn T and Hayakawa R},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c01526},
  url = {https://doi.org/10.1021/acs.nanolett.6c01526}
}

RIS

TY  - JOUR
TI  - Large Magnetoresistance in a Si-Based Double-Tunnel Junction with Purely Organic Radical Molecules.
AU  - Bera J
AU  - Basu TS
AU  - Wolf J
AU  - Zhang H
AU  - Marumoto K
AU  - Wakayama Y
AU  - Herrmann C
AU  - Huhn T
AU  - Hayakawa R
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c01526
UR  - https://doi.org/10.1021/acs.nanolett.6c01526
ER  - 

APA

J, B., TS, B., J, W., H, Z., K, M., Y, W., C, H., T, H., & R, H. (2026). Large Magnetoresistance in a Si-Based Double-Tunnel Junction with Purely Organic Radical Molecules.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c01526

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