Stabilized Negative Capacitance in In2Se3-Based 2D Ferroelectric Transistors
- DOI
- 10.1021/acs.nanolett.6c01781
- Published
- 2026-07-31
- Container
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.6c01781,
title = {Stabilized Negative Capacitance in In2Se3-Based 2D Ferroelectric Transistors},
author = {Weifan Cai and Guangchao Zhao and Xin Ju and Hong Kuan Ng and Qibin Zeng and Hui Kim Hui and Jiayi Sun and Sheila Sim and Yunxuan Pan and Guoqiang Xu and Huajun Liu and Dongzhi Chi and Diing Shenp Ang and Qing Zhang and Jing Wu},
year = {2026},
journal = {Nano Letters},
doi = {10.1021/acs.nanolett.6c01781},
url = {https://doi.org/10.1021/acs.nanolett.6c01781}
}RIS
TY - JOUR TI - Stabilized Negative Capacitance in In2Se3-Based 2D Ferroelectric Transistors AU - Weifan Cai AU - Guangchao Zhao AU - Xin Ju AU - Hong Kuan Ng AU - Qibin Zeng AU - Hui Kim Hui AU - Jiayi Sun AU - Sheila Sim AU - Yunxuan Pan AU - Guoqiang Xu AU - Huajun Liu AU - Dongzhi Chi AU - Diing Shenp Ang AU - Qing Zhang AU - Jing Wu PY - 2026 JO - Nano Letters DO - 10.1021/acs.nanolett.6c01781 UR - https://doi.org/10.1021/acs.nanolett.6c01781 ER -
APA
Cai, W., Zhao, G., Ju, X., Ng, H. K., Zeng, Q., Hui, H. K., Sun, J., Sim, S., Pan, Y., Xu, G., Liu, H., Chi, D., Ang, D. S., Zhang, Q., & Wu, J. (2026). Stabilized Negative Capacitance in In2Se3-Based 2D Ferroelectric Transistors. Nano Letters. https://doi.org/10.1021/acs.nanolett.6c01781
Source records
- crossref · retrieved 2026-11-10T14:04:14.936Z