Achieving Fermi-Level Depinning and Ideal Metal Contact in β-Ga(2)O(3) Devices via MXene Integration.

Feng J, Yu W, Liu T, Wang T, Gui Q, Zhou H, Guo Y, Liu S, Robertson J, Zhang Z

DOI: 10.1021/acs.nanolett.6c01931
Published: 2026 Jul 15
Container: Nano letters
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.6c01931,
  title = {Achieving Fermi-Level Depinning and Ideal Metal Contact in β-Ga(2)O(3) Devices via MXene Integration.},
  author = {Feng J and Yu W and Liu T and Wang T and Gui Q and Zhou H and Guo Y and Liu S and Robertson J and Zhang Z},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c01931},
  url = {https://doi.org/10.1021/acs.nanolett.6c01931}
}

RIS

TY  - JOUR
TI  - Achieving Fermi-Level Depinning and Ideal Metal Contact in β-Ga(2)O(3) Devices via MXene Integration.
AU  - Feng J
AU  - Yu W
AU  - Liu T
AU  - Wang T
AU  - Gui Q
AU  - Zhou H
AU  - Guo Y
AU  - Liu S
AU  - Robertson J
AU  - Zhang Z
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c01931
UR  - https://doi.org/10.1021/acs.nanolett.6c01931
ER  -

APA

J, F., W, Y., T, L., T, W., Q, G., H, Z., Y, G., S, L., J, R., & Z, Z. (2026). Achieving Fermi-Level Depinning and Ideal Metal Contact in β-Ga(2)O(3) Devices via MXene Integration.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c01931

Source records

pubmed · retrieved 2026-09-26T07:55:19.591Z