A Capacitorless Graphene Drain Impact Ionization Memory with Ultralow Write Pulses

Chengjie Tang, Fangxuan Yi, Haobo Huang, Weiao Chen, Wenpeng Liu, Feige Lou, Shisheng Xiong, Yudi Zhao, Ye Lu

Open source

DOI
10.1021/acs.nanolett.6c02543
Published
2026-08-06
Container
Nano Letters
Publisher
American Chemical Society (ACS)
Open access
unknown

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BibTeX

@article{allodium:10.1021/acs.nanolett.6c02543,
  title = {A Capacitorless
Graphene Drain Impact Ionization Memory
with Ultralow Write Pulses},
  author = {Chengjie Tang and Fangxuan Yi and Haobo Huang and Weiao Chen and Wenpeng Liu and Feige Lou and Shisheng Xiong and Yudi Zhao and Ye Lu},
  year = {2026},
  journal = {Nano Letters},
  doi = {10.1021/acs.nanolett.6c02543},
  url = {https://doi.org/10.1021/acs.nanolett.6c02543}
}

RIS

TY  - JOUR
TI  - A Capacitorless
Graphene Drain Impact Ionization Memory
with Ultralow Write Pulses
AU  - Chengjie Tang
AU  - Fangxuan Yi
AU  - Haobo Huang
AU  - Weiao Chen
AU  - Wenpeng Liu
AU  - Feige Lou
AU  - Shisheng Xiong
AU  - Yudi Zhao
AU  - Ye Lu
PY  - 2026
JO  - Nano Letters
DO  - 10.1021/acs.nanolett.6c02543
UR  - https://doi.org/10.1021/acs.nanolett.6c02543
ER  - 

APA

Tang, C., Yi, F., Huang, H., Chen, W., Liu, W., Lou, F., Xiong, S., Zhao, Y., & Lu, Y. (2026). A Capacitorless Graphene Drain Impact Ionization Memory with Ultralow Write Pulses. Nano Letters. https://doi.org/10.1021/acs.nanolett.6c02543

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