A Capacitorless Graphene Drain Impact Ionization Memory with Ultralow Write Pulses
- DOI
- 10.1021/acs.nanolett.6c02543
- Published
- 2026-08-06
- Container
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.6c02543,
title = {A Capacitorless
Graphene Drain Impact Ionization Memory
with Ultralow Write Pulses},
author = {Chengjie Tang and Fangxuan Yi and Haobo Huang and Weiao Chen and Wenpeng Liu and Feige Lou and Shisheng Xiong and Yudi Zhao and Ye Lu},
year = {2026},
journal = {Nano Letters},
doi = {10.1021/acs.nanolett.6c02543},
url = {https://doi.org/10.1021/acs.nanolett.6c02543}
}RIS
TY - JOUR TI - A Capacitorless Graphene Drain Impact Ionization Memory with Ultralow Write Pulses AU - Chengjie Tang AU - Fangxuan Yi AU - Haobo Huang AU - Weiao Chen AU - Wenpeng Liu AU - Feige Lou AU - Shisheng Xiong AU - Yudi Zhao AU - Ye Lu PY - 2026 JO - Nano Letters DO - 10.1021/acs.nanolett.6c02543 UR - https://doi.org/10.1021/acs.nanolett.6c02543 ER -
APA
Tang, C., Yi, F., Huang, H., Chen, W., Liu, W., Lou, F., Xiong, S., Zhao, Y., & Lu, Y. (2026). A Capacitorless Graphene Drain Impact Ionization Memory with Ultralow Write Pulses. Nano Letters. https://doi.org/10.1021/acs.nanolett.6c02543
Source records
- crossref · retrieved 2026-09-26T09:43:09.675Z