(Anti)ferroelectricity Induced Dual-Breathing Mode in Bulk Kagome Semiconductor Nb3I8.

Hong J, Wang H, Sui F, Wang KQ, Han X, Zheng Y, Tong WY, Deng X, Guan Z, Tian B, Qi R, Huang R, Xiang PH, Zhong N, Peng H, Yue F, Chu J, Shi Y, Duan CG

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DOI: 10.1021/acs.nanolett.6c02635
Published: 2026 Aug 5
Container: Nano letters
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.6c02635,
  title = {(Anti)ferroelectricity Induced Dual-Breathing Mode in Bulk Kagome Semiconductor Nb3I8.},
  author = {Hong J and Wang H and Sui F and Wang KQ and Han X and Zheng Y and Tong WY and Deng X and Guan Z and Tian B and Qi R and Huang R and Xiang PH and Zhong N and Peng H and Yue F and Chu J and Shi Y and Duan CG},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c02635},
  url = {https://doi.org/10.1021/acs.nanolett.6c02635}
}

RIS

TY  - JOUR
TI  - (Anti)ferroelectricity Induced Dual-Breathing Mode in Bulk Kagome Semiconductor Nb3I8.
AU  - Hong J
AU  - Wang H
AU  - Sui F
AU  - Wang KQ
AU  - Han X
AU  - Zheng Y
AU  - Tong WY
AU  - Deng X
AU  - Guan Z
AU  - Tian B
AU  - Qi R
AU  - Huang R
AU  - Xiang PH
AU  - Zhong N
AU  - Peng H
AU  - Yue F
AU  - Chu J
AU  - Shi Y
AU  - Duan CG
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c02635
UR  - https://doi.org/10.1021/acs.nanolett.6c02635
ER  -

APA

J, H., H, W., F, S., KQ, W., X, H., Y, Z., WY, T., X, D., Z, G., B, T., R, Q., R, H., PH, X., N, Z., H, P., F, Y., J, C., Y, S., & CG, D. (2026). (Anti)ferroelectricity Induced Dual-Breathing Mode in Bulk Kagome Semiconductor Nb3I8.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c02635

Source records

pubmed · retrieved 2026-09-26T00:57:14.591Z