A Highly Robust MoS2-xOδ Volatile Memtransistor Array for Reservoir Computing

Wen Deng, Xin Yan, Dihua Tang, Wenran Yin, Han Xu, Hao Zhang, Rui Su, Wen Luo

Open source

DOI: 10.1021/acs.nanolett.6c02779
Published: 2026-08-06
Container: Nano Letters
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.6c02779,
  title = {A Highly Robust
MoS2-xOδ Volatile Memtransistor
Array for Reservoir Computing},
  author = {Wen Deng and Xin Yan and Dihua Tang and Wenran Yin and Han Xu and Hao Zhang and Rui Su and Wen Luo},
  year = {2026},
  journal = {Nano Letters},
  doi = {10.1021/acs.nanolett.6c02779},
  url = {https://doi.org/10.1021/acs.nanolett.6c02779}
}

RIS

TY  - JOUR
TI  - A Highly Robust
MoS2-xOδ Volatile Memtransistor
Array for Reservoir Computing
AU  - Wen Deng
AU  - Xin Yan
AU  - Dihua Tang
AU  - Wenran Yin
AU  - Han Xu
AU  - Hao Zhang
AU  - Rui Su
AU  - Wen Luo
PY  - 2026
JO  - Nano Letters
DO  - 10.1021/acs.nanolett.6c02779
UR  - https://doi.org/10.1021/acs.nanolett.6c02779
ER  -

APA

Deng, W., Yan, X., Tang, D., Yin, W., Xu, H., Zhang, H., Su, R., & Luo, W. (2026). A Highly Robust MoS2-xOδ Volatile Memtransistor Array for Reservoir Computing. Nano Letters. https://doi.org/10.1021/acs.nanolett.6c02779

Source records

crossref · retrieved 2026-09-25T23:25:38.152Z