High-Mobility MoS2 Transistors Enabled by In2P3S9 Functional Dielectric Engineering and Interfacial Dipole Modulation
- DOI
- 10.1021/acs.nanolett.6c03755
- Published
- 2026-09-24
- Container
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acs.nanolett.6c03755,
title = {High-Mobility MoS2 Transistors Enabled
by In2P3S9 Functional Dielectric
Engineering and Interfacial Dipole Modulation},
author = {Shuo Liu and Yongsi Liu and Xinyun Zhou and Wanglong Wu and Binkun Wang and Mianzeng Zhong},
year = {2026},
journal = {Nano Letters},
doi = {10.1021/acs.nanolett.6c03755},
url = {https://doi.org/10.1021/acs.nanolett.6c03755}
}RIS
TY - JOUR TI - High-Mobility MoS2 Transistors Enabled by In2P3S9 Functional Dielectric Engineering and Interfacial Dipole Modulation AU - Shuo Liu AU - Yongsi Liu AU - Xinyun Zhou AU - Wanglong Wu AU - Binkun Wang AU - Mianzeng Zhong PY - 2026 JO - Nano Letters DO - 10.1021/acs.nanolett.6c03755 UR - https://doi.org/10.1021/acs.nanolett.6c03755 ER -
APA
Liu, S., Liu, Y., Zhou, X., Wu, W., Wang, B., & Zhong, M. (2026). High-Mobility MoS2 Transistors Enabled by In2P3S9 Functional Dielectric Engineering and Interfacial Dipole Modulation. Nano Letters. https://doi.org/10.1021/acs.nanolett.6c03755
Source records
- crossref · retrieved 2026-11-10T14:11:28.790Z