Confinement Drives Valley Splitting above 4 K in Buried Silicon Quantum Wells.

Degli Esposti D, Brann EC, Elsayed A, Costa D, Friesen M, Scappucci G

DOI: 10.1021/acs.nanolett.6c04172
Published: 2026 Nov 4
Container: Nano letters
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acs.nanolett.6c04172,
  title = {Confinement Drives Valley Splitting above 4 K in Buried Silicon Quantum Wells.},
  author = {Degli Esposti D and Brann EC and Elsayed A and Costa D and Friesen M and Scappucci G},
  year = {2026},
  journal = {Nano letters},
  doi = {10.1021/acs.nanolett.6c04172},
  url = {https://doi.org/10.1021/acs.nanolett.6c04172}
}

RIS

TY  - JOUR
TI  - Confinement Drives Valley Splitting above 4 K in Buried Silicon Quantum Wells.
AU  - Degli Esposti D
AU  - Brann EC
AU  - Elsayed A
AU  - Costa D
AU  - Friesen M
AU  - Scappucci G
PY  - 2026
JO  - Nano letters
DO  - 10.1021/acs.nanolett.6c04172
UR  - https://doi.org/10.1021/acs.nanolett.6c04172
ER  -

APA

D, D. E., EC, B., A, E., D, C., M, F., & G, S. (2026). Confinement Drives Valley Splitting above 4 K in Buried Silicon Quantum Wells.. Nano letters. https://doi.org/10.1021/acs.nanolett.6c04172

Source records

pubmed · retrieved 2026-11-10T14:03:57.073Z