Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling

Poorna Sundari M, Lakshmi Priya G

Open source

DOI: 10.1021/acsabm.5c01850
Published: 2026-01-20
Container: ACS Applied Bio Materials
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsabm.5c01850,
  title = {Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling},
  author = {Poorna Sundari M and Lakshmi Priya G},
  year = {2026},
  journal = {ACS Applied Bio Materials},
  doi = {10.1021/acsabm.5c01850},
  url = {https://doi.org/10.1021/acsabm.5c01850}
}

RIS

TY  - JOUR
TI  - Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling
AU  - Poorna Sundari M
AU  - Lakshmi Priya G
PY  - 2026
JO  - ACS Applied Bio Materials
DO  - 10.1021/acsabm.5c01850
UR  - https://doi.org/10.1021/acsabm.5c01850
ER  -

APA

M, P. S., & G, L. P. (2026). Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling. ACS Applied Bio Materials. https://doi.org/10.1021/acsabm.5c01850

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crossref · retrieved 2026-09-25T17:47:15.837Z