On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance.
- DOI
- 10.1021/acsaelm.1c00379
- Published
- 2021 Jul 27
- Container
- ACS applied electronic materials
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1021/acsaelm.1c00379,
title = {On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance.},
author = {Mahlouji R and Zhang Y and Verheijen MA and Hofmann JP and Kessels WMM and Sagade AA and Bol AA},
year = {2021},
journal = {ACS applied electronic materials},
doi = {10.1021/acsaelm.1c00379},
url = {https://doi.org/10.1021/acsaelm.1c00379}
}RIS
TY - JOUR TI - On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance. AU - Mahlouji R AU - Zhang Y AU - Verheijen MA AU - Hofmann JP AU - Kessels WMM AU - Sagade AA AU - Bol AA PY - 2021 JO - ACS applied electronic materials DO - 10.1021/acsaelm.1c00379 UR - https://doi.org/10.1021/acsaelm.1c00379 ER -
APA
R, M., Y, Z., MA, V., JP, H., WMM, K., AA, S., & AA, B. (2021). On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance.. ACS applied electronic materials. https://doi.org/10.1021/acsaelm.1c00379
Source records
- pubmed · retrieved 2026-11-10T18:59:50.150Z