Single-Crystalline High-Quality β‑Ga<sub>2</sub>O<sub>3</sub> Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition.
- DOI
- 10.1021/acsaenm.6c00439
- Published
- 2026-06-02
- Container
- ACS Appl Eng Mater
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1021/acsaenm.6c00439,
title = {Single-Crystalline High-Quality β‑Ga\<sub\>2\</sub\>O\<sub\>3\</sub\> Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition.},
author = {Wang G and Xie S and Brand W and Khan SA and Ibreljic A and Shima D and Ma Y and Challa B and Sanyal S and Alema F and Osinsky A and Bhuiyan A and Balakrishnan G and Pasayat SS.},
year = {2026},
journal = {ACS Appl Eng Mater},
doi = {10.1021/acsaenm.6c00439},
url = {https://doi.org/10.1021/acsaenm.6c00439}
}RIS
TY - JOUR TI - Single-Crystalline High-Quality β‑Ga<sub>2</sub>O<sub>3</sub> Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition. AU - Wang G AU - Xie S AU - Brand W AU - Khan SA AU - Ibreljic A AU - Shima D AU - Ma Y AU - Challa B AU - Sanyal S AU - Alema F AU - Osinsky A AU - Bhuiyan A AU - Balakrishnan G AU - Pasayat SS. PY - 2026 JO - ACS Appl Eng Mater DO - 10.1021/acsaenm.6c00439 UR - https://doi.org/10.1021/acsaenm.6c00439 ER -
APA
G, W., S, X., W, B., SA, K., A, I., D, S., Y, M., B, C., S, S., F, A., A, O., A, B., G, B., & SS., P. (2026). Single-Crystalline High-Quality β‑Ga<sub>2</sub>O<sub>3</sub> Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition.. ACS Appl Eng Mater. https://doi.org/10.1021/acsaenm.6c00439
Source records
- europe-pmc · retrieved 2026-09-26T04:32:37.138Z