Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors
- DOI
- 10.1021/acsami.1c00249
- Published
- 2021-03-29
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.1c00249,
title = {Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors},
author = {Katie Stallings and Jeremy Smith and Yao Chen and Li Zeng and Binghao Wang and Gabriele Di Carlo and Michael J. Bedzyk and Antonio Facchetti and Tobin J. Marks},
year = {2021},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.1c00249},
url = {https://doi.org/10.1021/acsami.1c00249}
}RIS
TY - JOUR TI - Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors AU - Katie Stallings AU - Jeremy Smith AU - Yao Chen AU - Li Zeng AU - Binghao Wang AU - Gabriele Di Carlo AU - Michael J. Bedzyk AU - Antonio Facchetti AU - Tobin J. Marks PY - 2021 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.1c00249 UR - https://doi.org/10.1021/acsami.1c00249 ER -
APA
Stallings, K., Smith, J., Chen, Y., Zeng, L., Wang, B., Carlo, G. D., Bedzyk, M. J., Facchetti, A., & Marks, T. J. (2021). Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.1c00249
Source records
- crossref · retrieved 2026-09-27T04:54:58.452Z