Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors.
- DOI
- 10.1021/acsami.1c22990
- Published
- 2022 Mar 9
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.1c22990,
title = {Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors.},
author = {Ma J and Chen X and Wang X and Bian J and Tong L and Chen H and Guo X and Xia Y and Zhang X and Xu Z and He C and Qu J and Zhou P and Wu C and Wu X and Bao W},
year = {2022},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.1c22990},
url = {https://doi.org/10.1021/acsami.1c22990}
}RIS
TY - JOUR TI - Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors. AU - Ma J AU - Chen X AU - Wang X AU - Bian J AU - Tong L AU - Chen H AU - Guo X AU - Xia Y AU - Zhang X AU - Xu Z AU - He C AU - Qu J AU - Zhou P AU - Wu C AU - Wu X AU - Bao W PY - 2022 JO - ACS applied materials & interfaces DO - 10.1021/acsami.1c22990 UR - https://doi.org/10.1021/acsami.1c22990 ER -
APA
J, M., X, C., X, W., J, B., L, T., H, C., X, G., Y, X., X, Z., Z, X., C, H., J, Q., P, Z., C, W., X, W., & W, B. (2022). Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.1c22990
Source records
- pubmed · retrieved 2026-09-25T23:42:45.282Z