High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing.

Wang Z, Guan Z, Sun H, Luo Z, Zhao H, Wang H, Yin Y, Li X

DOI: 10.1021/acsami.2c04441
Published: 2022 Jun 1
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.2c04441,
  title = {High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing.},
  author = {Wang Z and Guan Z and Sun H and Luo Z and Zhao H and Wang H and Yin Y and Li X},
  year = {2022},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.2c04441},
  url = {https://doi.org/10.1021/acsami.2c04441}
}

RIS

TY  - JOUR
TI  - High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing.
AU  - Wang Z
AU  - Guan Z
AU  - Sun H
AU  - Luo Z
AU  - Zhao H
AU  - Wang H
AU  - Yin Y
AU  - Li X
PY  - 2022
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.2c04441
UR  - https://doi.org/10.1021/acsami.2c04441
ER  -

APA

Z, W., Z, G., H, S., Z, L., H, Z., H, W., Y, Y., & X, L. (2022). High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.2c04441

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pubmed · retrieved 2026-09-24T22:48:58.934Z