Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors.
- DOI
- 10.1021/acsami.2c13151
- Published
- 2022-12-20
- Container
- ACS Appl Mater Interfaces
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.2c13151,
title = {Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors.},
author = {Iordanidou K and Mitra R and Shetty N and Lara-Avila S and Dash S and Kubatkin S and Wiktor J.},
year = {2023},
journal = {ACS Appl Mater Interfaces},
doi = {10.1021/acsami.2c13151},
url = {https://doi.org/10.1021/acsami.2c13151}
}RIS
TY - JOUR TI - Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors. AU - Iordanidou K AU - Mitra R AU - Shetty N AU - Lara-Avila S AU - Dash S AU - Kubatkin S AU - Wiktor J. PY - 2023 JO - ACS Appl Mater Interfaces DO - 10.1021/acsami.2c13151 UR - https://doi.org/10.1021/acsami.2c13151 ER -
APA
K, I., R, M., N, S., S, L., S, D., S, K., & J., W. (2023). Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors.. ACS Appl Mater Interfaces. https://doi.org/10.1021/acsami.2c13151
Source records
- europe-pmc · retrieved 2026-09-25T23:17:12.697Z