Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate.
- DOI
- 10.1021/acsami.4c08190
- Published
- 2024 Oct 16
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.4c08190,
title = {Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate.},
author = {Zhao Z and Woo S and Aabrar KA and Kirtania SG and Jiang Z and Deng S and Xiao Y and Mulaosmanovic H and Duenkel S and Kleimaier D and Soss S and Beyer S and Joshi R and Meninger S and Mohamed M and Kim K and Woo J and Lim S and Kim K and Kim W and Ha D and Narayanan V and Datta S and Yu S and Ni K},
year = {2024},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.4c08190},
url = {https://doi.org/10.1021/acsami.4c08190}
}RIS
TY - JOUR TI - Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate. AU - Zhao Z AU - Woo S AU - Aabrar KA AU - Kirtania SG AU - Jiang Z AU - Deng S AU - Xiao Y AU - Mulaosmanovic H AU - Duenkel S AU - Kleimaier D AU - Soss S AU - Beyer S AU - Joshi R AU - Meninger S AU - Mohamed M AU - Kim K AU - Woo J AU - Lim S AU - Kim K AU - Kim W AU - Ha D AU - Narayanan V AU - Datta S AU - Yu S AU - Ni K PY - 2024 JO - ACS applied materials & interfaces DO - 10.1021/acsami.4c08190 UR - https://doi.org/10.1021/acsami.4c08190 ER -
APA
Z, Z., S, W., KA, A., SG, K., Z, J., S, D., Y, X., H, M., S, D., D, K., S, S., S, B., R, J., S, M., M, M., K, K., J, W., S, L., K, K., W, K., D, H., V, N., S, D., S, Y., & K, N. (2024). Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.4c08190
Source records
- pubmed · retrieved 2026-09-26T15:37:28.110Z