Flexible p-Type WSe(2) Transistors with Alumina Top-Gate Dielectric.

Phùng QT, Völkel L, Piacentini A, Esteki A, Grundmann A, Kalisch H, Heuken M, Vescan A, Neumaier D, Lemme MC, Daus A

Open source

DOI
10.1021/acsami.4c13296
Published
2024 Nov 6
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acsami.4c13296,
  title = {Flexible p-Type WSe(2) Transistors with Alumina Top-Gate Dielectric.},
  author = {Phùng QT and Völkel L and Piacentini A and Esteki A and Grundmann A and Kalisch H and Heuken M and Vescan A and Neumaier D and Lemme MC and Daus A},
  year = {2024},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.4c13296},
  url = {https://doi.org/10.1021/acsami.4c13296}
}

RIS

TY  - JOUR
TI  - Flexible p-Type WSe(2) Transistors with Alumina Top-Gate Dielectric.
AU  - Phùng QT
AU  - Völkel L
AU  - Piacentini A
AU  - Esteki A
AU  - Grundmann A
AU  - Kalisch H
AU  - Heuken M
AU  - Vescan A
AU  - Neumaier D
AU  - Lemme MC
AU  - Daus A
PY  - 2024
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.4c13296
UR  - https://doi.org/10.1021/acsami.4c13296
ER  - 

APA

QT, P., L, V., A, P., A, E., A, G., H, K., M, H., A, V., D, N., MC, L., & A, D. (2024). Flexible p-Type WSe(2) Transistors with Alumina Top-Gate Dielectric.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.4c13296

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