Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10(12) Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution.

Liu CH, Hsiang KY, Li ZX, Chang FS, Lou ZF, Lee JY, Liu CW, Su P, Hou TH, Lee MH

Open source

DOI
10.1021/acsami.4c14132
Published
2025 Mar 5
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acsami.4c14132,
  title = {Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10(12) Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution.},
  author = {Liu CH and Hsiang KY and Li ZX and Chang FS and Lou ZF and Lee JY and Liu CW and Su P and Hou TH and Lee MH},
  year = {2025},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.4c14132},
  url = {https://doi.org/10.1021/acsami.4c14132}
}

RIS

TY  - JOUR
TI  - Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10(12) Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution.
AU  - Liu CH
AU  - Hsiang KY
AU  - Li ZX
AU  - Chang FS
AU  - Lou ZF
AU  - Lee JY
AU  - Liu CW
AU  - Su P
AU  - Hou TH
AU  - Lee MH
PY  - 2025
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.4c14132
UR  - https://doi.org/10.1021/acsami.4c14132
ER  - 

APA

CH, L., KY, H., ZX, L., FS, C., ZF, L., JY, L., CW, L., P, S., TH, H., & MH, L. (2025). Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >10(12) Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.4c14132

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