Ferroelectric Domain Wall Warp Memristor.

Sharma P, Lei CH, Liu Y, Sando D, Zhang Q, Valanoor N, Seidel J

DOI: 10.1021/acsami.4c16347
Published: 2025 Jan 8
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.4c16347,
  title = {Ferroelectric Domain Wall Warp Memristor.},
  author = {Sharma P and Lei CH and Liu Y and Sando D and Zhang Q and Valanoor N and Seidel J},
  year = {2025},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.4c16347},
  url = {https://doi.org/10.1021/acsami.4c16347}
}

RIS

TY  - JOUR
TI  - Ferroelectric Domain Wall Warp Memristor.
AU  - Sharma P
AU  - Lei CH
AU  - Liu Y
AU  - Sando D
AU  - Zhang Q
AU  - Valanoor N
AU  - Seidel J
PY  - 2025
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.4c16347
UR  - https://doi.org/10.1021/acsami.4c16347
ER  -

APA

P, S., CH, L., Y, L., D, S., Q, Z., N, V., & J, S. (2025). Ferroelectric Domain Wall Warp Memristor.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.4c16347

Source records

pubmed · retrieved 2026-09-25T22:12:48.537Z