Contact Resistance Optimization in MoS<sub>2</sub> Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
- DOI
- 10.1021/acsami.4c21596
- Published
- 2025-03-11
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.4c21596,
title = {Contact Resistance Optimization in MoS<sub>2</sub> Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications},
author = {Yuan Fa and Agata Piacentini and Bart Macco and Holger Kalisch and Michael Heuken and Andrei Vescan and Zhenxing Wang and Max C. Lemme},
year = {2025},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.4c21596},
url = {https://doi.org/10.1021/acsami.4c21596}
}RIS
TY - JOUR TI - Contact Resistance Optimization in MoS<sub>2</sub> Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications AU - Yuan Fa AU - Agata Piacentini AU - Bart Macco AU - Holger Kalisch AU - Michael Heuken AU - Andrei Vescan AU - Zhenxing Wang AU - Max C. Lemme PY - 2025 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.4c21596 UR - https://doi.org/10.1021/acsami.4c21596 ER -
APA
Fa, Y., Piacentini, A., Macco, B., Kalisch, H., Heuken, M., Vescan, A., Wang, Z., & Lemme, M. C. (2025). Contact Resistance Optimization in MoS<sub>2</sub> Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.4c21596
Source records
- crossref · retrieved 2026-09-27T01:08:48.819Z