Controlled Layer-by-Layer Etching of MoS₂.

Lin T, Kang B, Jeon M, Huffman C, Jeon J, Lee S, Han W, Lee J, Lee S, Yeom G, Kim K

DOI: 10.1021/acsami.5b03491
Published: 2015 Jul 29
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.5b03491,
  title = {Controlled Layer-by-Layer Etching of MoS₂.},
  author = {Lin T and Kang B and Jeon M and Huffman C and Jeon J and Lee S and Han W and Lee J and Lee S and Yeom G and Kim K},
  year = {2015},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.5b03491},
  url = {https://doi.org/10.1021/acsami.5b03491}
}

RIS

TY  - JOUR
TI  - Controlled Layer-by-Layer Etching of MoS₂.
AU  - Lin T
AU  - Kang B
AU  - Jeon M
AU  - Huffman C
AU  - Jeon J
AU  - Lee S
AU  - Han W
AU  - Lee J
AU  - Lee S
AU  - Yeom G
AU  - Kim K
PY  - 2015
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.5b03491
UR  - https://doi.org/10.1021/acsami.5b03491
ER  -

APA

T, L., B, K., M, J., C, H., J, J., S, L., W, H., J, L., S, L., G, Y., & K, K. (2015). Controlled Layer-by-Layer Etching of MoS₂.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.5b03491

Source records

pubmed · retrieved 2026-09-26T06:45:01.936Z