Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory.
- DOI
- 10.1021/acsami.5c00352
- Published
- 2025 Apr 2
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.5c00352,
title = {Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory.},
author = {Han G and Seo J and Park J and Hong M and Kim J and Lee K and Kim W and Ha D and Hwang H},
year = {2025},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.5c00352},
url = {https://doi.org/10.1021/acsami.5c00352}
}RIS
TY - JOUR TI - Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory. AU - Han G AU - Seo J AU - Park J AU - Hong M AU - Kim J AU - Lee K AU - Kim W AU - Ha D AU - Hwang H PY - 2025 JO - ACS applied materials & interfaces DO - 10.1021/acsami.5c00352 UR - https://doi.org/10.1021/acsami.5c00352 ER -
APA
G, H., J, S., J, P., M, H., J, K., K, L., W, K., D, H., & H, H. (2025). Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.5c00352
Source records
- pubmed · retrieved 2026-09-25T04:55:03.450Z