Electrochemical Preparation of Reliable and High Yield Memristors for Efficient Reservoir Computing Systems
- DOI
- 10.1021/acsami.5c10190
- Published
- 2025-09-11
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.5c10190,
title = {Electrochemical Preparation of Reliable and High Yield Memristors for Efficient Reservoir Computing Systems},
author = {Shuaibin Hua and Le Zhang and Liang Wang and Ruhui Zheng and Puli Gan and Xin Guo},
year = {2025},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.5c10190},
url = {https://doi.org/10.1021/acsami.5c10190}
}RIS
TY - JOUR TI - Electrochemical Preparation of Reliable and High Yield Memristors for Efficient Reservoir Computing Systems AU - Shuaibin Hua AU - Le Zhang AU - Liang Wang AU - Ruhui Zheng AU - Puli Gan AU - Xin Guo PY - 2025 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.5c10190 UR - https://doi.org/10.1021/acsami.5c10190 ER -
APA
Hua, S., Zhang, L., Wang, L., Zheng, R., Gan, P., & Guo, X. (2025). Electrochemical Preparation of Reliable and High Yield Memristors for Efficient Reservoir Computing Systems. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.5c10190
Source records
- crossref · retrieved 2026-09-25T09:11:41.002Z