Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors

Husam Walwil, Mohamadali Malakoutian, Daniel C. Shoemaker, Kelly Woo, Rohith Soman, Junrui Lyu, Eduardo M. Chumbes, Matthew DeJarld, Maher Tahhan, Jeffrey Laroche, Srabanti Chowdhury, Sukwon Choi

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DOI: 10.1021/acsami.5c13149
Published: 2025-10-20
Container: ACS Applied Materials & Interfaces
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.5c13149,
  title = {Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors},
  author = {Husam Walwil and Mohamadali Malakoutian and Daniel C. Shoemaker and Kelly Woo and Rohith Soman and Junrui Lyu and Eduardo M. Chumbes and Matthew DeJarld and Maher Tahhan and Jeffrey Laroche and Srabanti Chowdhury and Sukwon Choi},
  year = {2025},
  journal = {ACS Applied Materials \&amp; Interfaces},
  doi = {10.1021/acsami.5c13149},
  url = {https://doi.org/10.1021/acsami.5c13149}
}

RIS

TY  - JOUR
TI  - Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors
AU  - Husam Walwil
AU  - Mohamadali Malakoutian
AU  - Daniel C. Shoemaker
AU  - Kelly Woo
AU  - Rohith Soman
AU  - Junrui Lyu
AU  - Eduardo M. Chumbes
AU  - Matthew DeJarld
AU  - Maher Tahhan
AU  - Jeffrey Laroche
AU  - Srabanti Chowdhury
AU  - Sukwon Choi
PY  - 2025
JO  - ACS Applied Materials &amp; Interfaces
DO  - 10.1021/acsami.5c13149
UR  - https://doi.org/10.1021/acsami.5c13149
ER  -

APA

Walwil, H., Malakoutian, M., Shoemaker, D. C., Woo, K., Soman, R., Lyu, J., Chumbes, E. M., DeJarld, M., Tahhan, M., Laroche, J., Chowdhury, S., & Choi, S. (2025). Interfacial Thermal Transport in Top-Side Diamond Integrated AlGaN/GaN High Electron Mobility Transistors. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.5c13149

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crossref · retrieved 2026-09-26T15:39:44.074Z