Direct Bonding of 6-inch GaAs/SiC Wafers for Enhanced Thermal Management in High-Power Devices
- DOI
- 10.1021/acsami.5c21396
- Published
- 2026-01-26
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.5c21396,
title = {Direct Bonding of 6-inch GaAs/SiC Wafers for Enhanced Thermal Management in High-Power Devices},
author = {Yuan Yin and Zhetong Liu and Ziyue Xu and Qingxu Su and Szuyu Huang and Jiaxin Liu and Zhenzhong Wang and Peng Gao},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.5c21396},
url = {https://doi.org/10.1021/acsami.5c21396}
}RIS
TY - JOUR TI - Direct Bonding of 6-inch GaAs/SiC Wafers for Enhanced Thermal Management in High-Power Devices AU - Yuan Yin AU - Zhetong Liu AU - Ziyue Xu AU - Qingxu Su AU - Szuyu Huang AU - Jiaxin Liu AU - Zhenzhong Wang AU - Peng Gao PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.5c21396 UR - https://doi.org/10.1021/acsami.5c21396 ER -
APA
Yin, Y., Liu, Z., Xu, Z., Su, Q., Huang, S., Liu, J., Wang, Z., & Gao, P. (2026). Direct Bonding of 6-inch GaAs/SiC Wafers for Enhanced Thermal Management in High-Power Devices. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.5c21396
Source records
- crossref · retrieved 2026-09-25T04:39:24.674Z