Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa(2)Cu(3)O(x) with Excess Cu Addition.

Feighan J, Kim I, Kursumovic A, Bedford T, Choudhury A, Lu J, Dixon SC, Wang H, MacManus Driscoll JL, Hellenbrand M

DOI: 10.1021/acsami.5c23772
Published: 2026 Jul 22
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.5c23772,
  title = {Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa(2)Cu(3)O(x) with Excess Cu Addition.},
  author = {Feighan J and Kim I and Kursumovic A and Bedford T and Choudhury A and Lu J and Dixon SC and Wang H and MacManus Driscoll JL and Hellenbrand M},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.5c23772},
  url = {https://doi.org/10.1021/acsami.5c23772}
}

RIS

TY  - JOUR
TI  - Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa(2)Cu(3)O(x) with Excess Cu Addition.
AU  - Feighan J
AU  - Kim I
AU  - Kursumovic A
AU  - Bedford T
AU  - Choudhury A
AU  - Lu J
AU  - Dixon SC
AU  - Wang H
AU  - MacManus Driscoll JL
AU  - Hellenbrand M
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.5c23772
UR  - https://doi.org/10.1021/acsami.5c23772
ER  -

APA

J, F., I, K., A, K., T, B., A, C., J, L., SC, D., H, W., JL, M. D., & M, H. (2026). Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa(2)Cu(3)O(x) with Excess Cu Addition.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.5c23772

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pubmed · retrieved 2026-09-26T18:17:33.660Z