Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility-Reliability Trade-Off in Oxide Semiconductors.

Ryu SH, Kim DG, Koo H, Yeom K, Ryu DW, Park CK, Park JS.

DOI: 10.1021/acsami.5c24086
Published: 2026-01-22
Container: ACS Appl Mater Interfaces
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.5c24086,
  title = {Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility-Reliability Trade-Off in Oxide Semiconductors.},
  author = {Ryu SH and  Kim DG and  Koo H and  Yeom K and  Ryu DW and  Park CK and  Park JS.},
  year = {2026},
  journal = {ACS Appl Mater Interfaces},
  doi = {10.1021/acsami.5c24086},
  url = {https://doi.org/10.1021/acsami.5c24086}
}

RIS

TY  - JOUR
TI  - Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility-Reliability Trade-Off in Oxide Semiconductors.
AU  - Ryu SH
AU  -  Kim DG
AU  -  Koo H
AU  -  Yeom K
AU  -  Ryu DW
AU  -  Park CK
AU  -  Park JS.
PY  - 2026
JO  - ACS Appl Mater Interfaces
DO  - 10.1021/acsami.5c24086
UR  - https://doi.org/10.1021/acsami.5c24086
ER  -

APA

SH, R., DG, K., H, K., K, Y., DW, R., CK, P., & JS., P. (2026). Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility-Reliability Trade-Off in Oxide Semiconductors.. ACS Appl Mater Interfaces. https://doi.org/10.1021/acsami.5c24086

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europe-pmc · retrieved 2026-09-27T03:08:59.690Z