Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics
- DOI
- 10.1021/acsami.5c25852
- Published
- 2026-04-06
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.5c25852,
title = {Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics},
author = {Aomar Ezza and Denis Machon and Camille Sonneville and Eric Frayssinet and Yvon Cordier and Dominique Planson and Hassan Maher and Ali Soltani},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.5c25852},
url = {https://doi.org/10.1021/acsami.5c25852}
}RIS
TY - JOUR TI - Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics AU - Aomar Ezza AU - Denis Machon AU - Camille Sonneville AU - Eric Frayssinet AU - Yvon Cordier AU - Dominique Planson AU - Hassan Maher AU - Ali Soltani PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.5c25852 UR - https://doi.org/10.1021/acsami.5c25852 ER -
APA
Ezza, A., Machon, D., Sonneville, C., Frayssinet, E., Cordier, Y., Planson, D., Maher, H., & Soltani, A. (2026). Micro-Raman Scattering Analysis of Temperature-Dependent Electron Mobility and Fermi Level in n-Doped Homoepitaxial GaN Layers for Power Electronics. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.5c25852
Source records
- crossref · retrieved 2026-09-27T03:38:19.680Z