Low-Voltage Resistive Switching and Synaptic Plasticity in Cs2AgBiBr6 Memristors.

Miao Z, Kadid A, Löwen A, Kolluru N, Tückmantel C, Maschwitz T, Kreusel C, Aziz J, Janicke S, Wu B, Wang P, Riedl T, Neumaier D

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DOI
10.1021/acsami.6c03660
Published
2026 Jul 29
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acsami.6c03660,
  title = {Low-Voltage Resistive Switching and Synaptic Plasticity in Cs2AgBiBr6 Memristors.},
  author = {Miao Z and Kadid A and Löwen A and Kolluru N and Tückmantel C and Maschwitz T and Kreusel C and Aziz J and Janicke S and Wu B and Wang P and Riedl T and Neumaier D},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c03660},
  url = {https://doi.org/10.1021/acsami.6c03660}
}

RIS

TY  - JOUR
TI  - Low-Voltage Resistive Switching and Synaptic Plasticity in Cs2AgBiBr6 Memristors.
AU  - Miao Z
AU  - Kadid A
AU  - Löwen A
AU  - Kolluru N
AU  - Tückmantel C
AU  - Maschwitz T
AU  - Kreusel C
AU  - Aziz J
AU  - Janicke S
AU  - Wu B
AU  - Wang P
AU  - Riedl T
AU  - Neumaier D
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c03660
UR  - https://doi.org/10.1021/acsami.6c03660
ER  - 

APA

Z, M., A, K., A, L., N, K., C, T., T, M., C, K., J, A., S, J., B, W., P, W., T, R., & D, N. (2026). Low-Voltage Resistive Switching and Synaptic Plasticity in Cs2AgBiBr6 Memristors.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c03660

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