Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.
- DOI
- 10.1021/acsami.6c04333
- Published
- 2026 Aug 12
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c04333,
title = {Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.},
author = {Peng J and Jiang L and Lu W and Wang M and Liu C and Bi Z and Li J and Huang K and Kang J and Zhang R},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c04333},
url = {https://doi.org/10.1021/acsami.6c04333}
}RIS
TY - JOUR TI - Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells. AU - Peng J AU - Jiang L AU - Lu W AU - Wang M AU - Liu C AU - Bi Z AU - Li J AU - Huang K AU - Kang J AU - Zhang R PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c04333 UR - https://doi.org/10.1021/acsami.6c04333 ER -
APA
J, P., L, J., W, L., M, W., C, L., Z, B., J, L., K, H., J, K., & R, Z. (2026). Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c04333
Source records
- pubmed · retrieved 2026-09-26T13:09:30.366Z