Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.

Peng J, Jiang L, Lu W, Wang M, Liu C, Bi Z, Li J, Huang K, Kang J, Zhang R

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DOI
10.1021/acsami.6c04333
Published
2026 Aug 12
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsami.6c04333,
  title = {Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.},
  author = {Peng J and Jiang L and Lu W and Wang M and Liu C and Bi Z and Li J and Huang K and Kang J and Zhang R},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c04333},
  url = {https://doi.org/10.1021/acsami.6c04333}
}

RIS

TY  - JOUR
TI  - Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.
AU  - Peng J
AU  - Jiang L
AU  - Lu W
AU  - Wang M
AU  - Liu C
AU  - Bi Z
AU  - Li J
AU  - Huang K
AU  - Kang J
AU  - Zhang R
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c04333
UR  - https://doi.org/10.1021/acsami.6c04333
ER  - 

APA

J, P., L, J., W, L., M, W., C, L., Z, B., J, L., K, H., J, K., & R, Z. (2026). Scandium Diffusion-Driven Defect Formation and Thermal Stability in GaInN/GaN Multiple Quantum Wells.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c04333

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