Direct Determination of 3C/4H Silicon Carbide Heterophase Interfaces by Electron Ptychography.

Kim J, Harmon KJ, Heremans FJ, Delegan N, Highland MJ, Hruszkewycz SO, LeBeau JM.

DOI: 10.1021/acsami.6c04617
Published: 2026-05-18
Container: ACS Appl Mater Interfaces
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c04617,
  title = {Direct Determination of 3C/4H Silicon Carbide Heterophase Interfaces by Electron Ptychography.},
  author = {Kim J and  Harmon KJ and  Heremans FJ and  Delegan N and  Highland MJ and  Hruszkewycz SO and  LeBeau JM.},
  year = {2026},
  journal = {ACS Appl Mater Interfaces},
  doi = {10.1021/acsami.6c04617},
  url = {https://doi.org/10.1021/acsami.6c04617}
}

RIS

TY  - JOUR
TI  - Direct Determination of 3C/4H Silicon Carbide Heterophase Interfaces by Electron Ptychography.
AU  - Kim J
AU  -  Harmon KJ
AU  -  Heremans FJ
AU  -  Delegan N
AU  -  Highland MJ
AU  -  Hruszkewycz SO
AU  -  LeBeau JM.
PY  - 2026
JO  - ACS Appl Mater Interfaces
DO  - 10.1021/acsami.6c04617
UR  - https://doi.org/10.1021/acsami.6c04617
ER  -

APA

J, K., KJ, H., FJ, H., N, D., MJ, H., SO, H., & JM., L. (2026). Direct Determination of 3C/4H Silicon Carbide Heterophase Interfaces by Electron Ptychography.. ACS Appl Mater Interfaces. https://doi.org/10.1021/acsami.6c04617

Source records

europe-pmc · retrieved 2026-09-27T00:35:49.857Z