Decoupling Moisture and Hydrogen Barrier Properties in Silicon Nitride Films Deposited by Plasma-Enhanced Atomic Layer Deposition at 100 °C via Precursor-Defined Bonding Networks.
- DOI
- 10.1021/acsami.6c04884
- Published
- 2026 Jul 1
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c04884,
title = {Decoupling Moisture and Hydrogen Barrier Properties in Silicon Nitride Films Deposited by Plasma-Enhanced Atomic Layer Deposition at 100 °C via Precursor-Defined Bonding Networks.},
author = {Kim JM and Kim TK and Oh HJ and Oh MH and Baek JH and Yang TR and Gwoen JH and Song KC and Lee YH and Park JS},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c04884},
url = {https://doi.org/10.1021/acsami.6c04884}
}RIS
TY - JOUR TI - Decoupling Moisture and Hydrogen Barrier Properties in Silicon Nitride Films Deposited by Plasma-Enhanced Atomic Layer Deposition at 100 °C via Precursor-Defined Bonding Networks. AU - Kim JM AU - Kim TK AU - Oh HJ AU - Oh MH AU - Baek JH AU - Yang TR AU - Gwoen JH AU - Song KC AU - Lee YH AU - Park JS PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c04884 UR - https://doi.org/10.1021/acsami.6c04884 ER -
APA
JM, K., TK, K., HJ, O., MH, O., JH, B., TR, Y., JH, G., KC, S., YH, L., & JS, P. (2026). Decoupling Moisture and Hydrogen Barrier Properties in Silicon Nitride Films Deposited by Plasma-Enhanced Atomic Layer Deposition at 100 °C via Precursor-Defined Bonding Networks.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c04884
Source records
- pubmed · retrieved 2026-09-25T19:01:55.891Z
- europe-pmc · retrieved 2026-09-25T19:01:55.890Z