Tellurium Doping-Driven Material and Device Performance of Mg3(Sb0.3Bi0.7)2-Based Alloys.

Choudhary S, Verma AK

DOI: 10.1021/acsami.6c05594
Published: 2026 Aug 12
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c05594,
  title = {Tellurium Doping-Driven Material and Device Performance of Mg3(Sb0.3Bi0.7)2-Based Alloys.},
  author = {Choudhary S and Verma AK},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c05594},
  url = {https://doi.org/10.1021/acsami.6c05594}
}

RIS

TY  - JOUR
TI  - Tellurium Doping-Driven Material and Device Performance of Mg3(Sb0.3Bi0.7)2-Based Alloys.
AU  - Choudhary S
AU  - Verma AK
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c05594
UR  - https://doi.org/10.1021/acsami.6c05594
ER  -

APA

S, C., & AK, V. (2026). Tellurium Doping-Driven Material and Device Performance of Mg3(Sb0.3Bi0.7)2-Based Alloys.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c05594

Source records

pubmed · retrieved 2026-09-25T14:37:35.923Z
europe-pmc · retrieved 2026-09-25T14:37:35.936Z