Infrared Photodetector Fabrication by Femtosecond Laser-Engineered Black Silicon: A Comprehensive Review.

Zhao X, Xu M, Hu Y, He Y, Purushothaman A, Wang X, Amoruso S

DOI: 10.1021/acsami.6c05804
Published: 2026 Sep 1
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c05804,
  title = {Infrared Photodetector Fabrication by Femtosecond Laser-Engineered Black Silicon: A Comprehensive Review.},
  author = {Zhao X and Xu M and Hu Y and He Y and Purushothaman A and Wang X and Amoruso S},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c05804},
  url = {https://doi.org/10.1021/acsami.6c05804}
}

RIS

TY  - JOUR
TI  - Infrared Photodetector Fabrication by Femtosecond Laser-Engineered Black Silicon: A Comprehensive Review.
AU  - Zhao X
AU  - Xu M
AU  - Hu Y
AU  - He Y
AU  - Purushothaman A
AU  - Wang X
AU  - Amoruso S
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c05804
UR  - https://doi.org/10.1021/acsami.6c05804
ER  -

APA

X, Z., M, X., Y, H., Y, H., A, P., X, W., & S, A. (2026). Infrared Photodetector Fabrication by Femtosecond Laser-Engineered Black Silicon: A Comprehensive Review.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c05804

Source records

pubmed · retrieved 2026-09-25T04:15:50.037Z
europe-pmc · retrieved 2026-09-25T04:15:50.064Z