Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior.

Chu J, Zheng K, Wang Y, Song J

Open source

DOI
10.1021/acsami.6c06201
Published
2026 Aug 5
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsami.6c06201,
  title = {Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior.},
  author = {Chu J and Zheng K and Wang Y and Song J},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c06201},
  url = {https://doi.org/10.1021/acsami.6c06201}
}

RIS

TY  - JOUR
TI  - Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior.
AU  - Chu J
AU  - Zheng K
AU  - Wang Y
AU  - Song J
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c06201
UR  - https://doi.org/10.1021/acsami.6c06201
ER  - 

APA

J, C., K, Z., Y, W., & J, S. (2026). Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c06201

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