Enhanced Optical Efficiency and Carrier Dynamics in InGaN/GaN Light-Emitting-Diode Structures through Combination of Superlattice- and Prewell-Strain Control Strategy.

Alreshidi F, Chen LR, Alamoudi H, Almalawi DR, Wehbe N, Melinte G, Lu TC, Roqan IS

Open source

DOI
10.1021/acsami.6c06408
Published
2026 Jul 8
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acsami.6c06408,
  title = {Enhanced Optical Efficiency and Carrier Dynamics in InGaN/GaN Light-Emitting-Diode Structures through Combination of Superlattice- and Prewell-Strain Control Strategy.},
  author = {Alreshidi F and Chen LR and Alamoudi H and Almalawi DR and Wehbe N and Melinte G and Lu TC and Roqan IS},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c06408},
  url = {https://doi.org/10.1021/acsami.6c06408}
}

RIS

TY  - JOUR
TI  - Enhanced Optical Efficiency and Carrier Dynamics in InGaN/GaN Light-Emitting-Diode Structures through Combination of Superlattice- and Prewell-Strain Control Strategy.
AU  - Alreshidi F
AU  - Chen LR
AU  - Alamoudi H
AU  - Almalawi DR
AU  - Wehbe N
AU  - Melinte G
AU  - Lu TC
AU  - Roqan IS
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c06408
UR  - https://doi.org/10.1021/acsami.6c06408
ER  - 

APA

F, A., LR, C., H, A., DR, A., N, W., G, M., TC, L., & IS, R. (2026). Enhanced Optical Efficiency and Carrier Dynamics in InGaN/GaN Light-Emitting-Diode Structures through Combination of Superlattice- and Prewell-Strain Control Strategy.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c06408

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