Deoxyribonucleic Acid Brick Crystal-Based Textile Memristor with a Set Voltage of 0.06 V and a High Switching Ratio as an Artificial Synapse for Neuromorphic Computing.

Wang Z, Liu X, Xu C, Zhao K, Xu T, Wang Y, Guan Z, Wu C, Zhao J, Yan X

Open source

DOI
10.1021/acsami.6c06863
Published
2026 Sep 2
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsami.6c06863,
  title = {Deoxyribonucleic Acid Brick Crystal-Based Textile Memristor with a Set Voltage of 0.06 V and a High Switching Ratio as an Artificial Synapse for Neuromorphic Computing.},
  author = {Wang Z and Liu X and Xu C and Zhao K and Xu T and Wang Y and Guan Z and Wu C and Zhao J and Yan X},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c06863},
  url = {https://doi.org/10.1021/acsami.6c06863}
}

RIS

TY  - JOUR
TI  - Deoxyribonucleic Acid Brick Crystal-Based Textile Memristor with a Set Voltage of 0.06 V and a High Switching Ratio as an Artificial Synapse for Neuromorphic Computing.
AU  - Wang Z
AU  - Liu X
AU  - Xu C
AU  - Zhao K
AU  - Xu T
AU  - Wang Y
AU  - Guan Z
AU  - Wu C
AU  - Zhao J
AU  - Yan X
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c06863
UR  - https://doi.org/10.1021/acsami.6c06863
ER  - 

APA

Z, W., X, L., C, X., K, Z., T, X., Y, W., Z, G., C, W., J, Z., & X, Y. (2026). Deoxyribonucleic Acid Brick Crystal-Based Textile Memristor with a Set Voltage of 0.06 V and a High Switching Ratio as an Artificial Synapse for Neuromorphic Computing.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c06863

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