Ultra-Low Current-Driven Non-Volatile Magnetization Switching in Inhomogeneous Fe3GeTe2 via Exchange-Coupled Artificial Domains

Alapan Bera, Soumik Mukhopadhyay

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DOI: 10.1021/acsami.6c08036
Published: 2026-08-21
Container: ACS Applied Materials & Interfaces
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c08036,
  title = {Ultra-Low Current-Driven Non-Volatile Magnetization Switching in Inhomogeneous Fe3GeTe2 via Exchange-Coupled Artificial Domains},
  author = {Alapan Bera and Soumik Mukhopadhyay},
  year = {2026},
  journal = {ACS Applied Materials \&amp; Interfaces},
  doi = {10.1021/acsami.6c08036},
  url = {https://doi.org/10.1021/acsami.6c08036}
}

RIS

TY  - JOUR
TI  - Ultra-Low Current-Driven Non-Volatile Magnetization Switching in Inhomogeneous Fe3GeTe2 via Exchange-Coupled Artificial Domains
AU  - Alapan Bera
AU  - Soumik Mukhopadhyay
PY  - 2026
JO  - ACS Applied Materials &amp; Interfaces
DO  - 10.1021/acsami.6c08036
UR  - https://doi.org/10.1021/acsami.6c08036
ER  -

APA

Bera, A., & Mukhopadhyay, S. (2026). Ultra-Low Current-Driven Non-Volatile Magnetization Switching in Inhomogeneous Fe3GeTe2 via Exchange-Coupled Artificial Domains. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c08036

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crossref · retrieved 2026-11-10T10:35:34.339Z