Multifunctional Device Design and Applications of GaN and Transition Metal Dichalcogenides Heterojunctions.
- DOI
- 10.1021/acsami.6c08831
- Published
- 2026 Aug 26
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c08831,
title = {Multifunctional Device Design and Applications of GaN and Transition Metal Dichalcogenides Heterojunctions.},
author = {Li G and Luo L and Zhang Q and Yue F and Wang S and Lan D and Gao F and Li S},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c08831},
url = {https://doi.org/10.1021/acsami.6c08831}
}RIS
TY - JOUR TI - Multifunctional Device Design and Applications of GaN and Transition Metal Dichalcogenides Heterojunctions. AU - Li G AU - Luo L AU - Zhang Q AU - Yue F AU - Wang S AU - Lan D AU - Gao F AU - Li S PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c08831 UR - https://doi.org/10.1021/acsami.6c08831 ER -
APA
G, L., L, L., Q, Z., F, Y., S, W., D, L., F, G., & S, L. (2026). Multifunctional Device Design and Applications of GaN and Transition Metal Dichalcogenides Heterojunctions.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c08831
Source records
- pubmed · retrieved 2026-09-25T06:31:19.672Z