Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory.

Jeong WH, Yang MK, Kim GH

DOI: 10.1021/acsami.6c10232
Published: 2026 Sep 10
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c10232,
  title = {Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory.},
  author = {Jeong WH and Yang MK and Kim GH},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c10232},
  url = {https://doi.org/10.1021/acsami.6c10232}
}

RIS

TY  - JOUR
TI  - Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory.
AU  - Jeong WH
AU  - Yang MK
AU  - Kim GH
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c10232
UR  - https://doi.org/10.1021/acsami.6c10232
ER  -

APA

WH, J., MK, Y., & GH, K. (2026). Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c10232

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pubmed · retrieved 2026-09-25T06:49:40.452Z