Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory

Won Hee Jeong, Min Kyu Yang, Gun Hwan Kim

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DOI: 10.1021/acsami.6c10232
Published: 2026-09-10
Container: ACS Applied Materials & Interfaces
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c10232,
  title = {Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory},
  author = {Won Hee Jeong and Min Kyu Yang and Gun Hwan Kim},
  year = {2026},
  journal = {ACS Applied Materials \&amp; Interfaces},
  doi = {10.1021/acsami.6c10232},
  url = {https://doi.org/10.1021/acsami.6c10232}
}

RIS

TY  - JOUR
TI  - Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory
AU  - Won Hee Jeong
AU  - Min Kyu Yang
AU  - Gun Hwan Kim
PY  - 2026
JO  - ACS Applied Materials &amp; Interfaces
DO  - 10.1021/acsami.6c10232
UR  - https://doi.org/10.1021/acsami.6c10232
ER  -

APA

Jeong, W. H., Yang, M. K., & Kim, G. H. (2026). Trap-Controlled Multi-Level Switching in In-Doped GeSbSe for Selector-Only Memory. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c10232

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crossref · retrieved 2026-11-10T08:59:48.056Z