Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing.
- DOI
- 10.1021/acsami.6c10453
- Published
- 2026 Sep 1
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c10453,
title = {Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing.},
author = {Kim D and Park HL and Lee YW and Han S and Shibasaki Y and Lee J and Kim MH},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c10453},
url = {https://doi.org/10.1021/acsami.6c10453}
}RIS
TY - JOUR TI - Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing. AU - Kim D AU - Park HL AU - Lee YW AU - Han S AU - Shibasaki Y AU - Lee J AU - Kim MH PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c10453 UR - https://doi.org/10.1021/acsami.6c10453 ER -
APA
D, K., HL, P., YW, L., S, H., Y, S., J, L., & MH, K. (2026). Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c10453
Source records
- pubmed · retrieved 2026-09-25T04:38:16.589Z