Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing
- DOI
- 10.1021/acsami.6c10453
- Published
- 2026-09-01
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c10453,
title = {Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing},
author = {Dongin Kim and Hea-Lim Park and Yeon-Woo Lee and Sora Han and Yuji Shibasaki and Jonghee Lee and Min-Hoi Kim},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.6c10453},
url = {https://doi.org/10.1021/acsami.6c10453}
}RIS
TY - JOUR TI - Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing AU - Dongin Kim AU - Hea-Lim Park AU - Yeon-Woo Lee AU - Sora Han AU - Yuji Shibasaki AU - Jonghee Lee AU - Min-Hoi Kim PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.6c10453 UR - https://doi.org/10.1021/acsami.6c10453 ER -
APA
Kim, D., Park, H., Lee, Y., Han, S., Shibasaki, Y., Lee, J., & Kim, M. (2026). Eco-Friendly Charge-Trapping Memory Transistors with Balanced Rewritability for Neuromorphic Computing. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c10453
Source records
- crossref · retrieved 2026-11-10T10:44:06.240Z