Ultrahigh On/Off Ratio Oxide Transistors via Noncoplanar Schottky-Ohmic Contacts.

Li D, Peng C, Xu M, Shen M, Cai J, Wu W, Pan X, Zou R, Chen L, Dong H, Li J, Li X, Zhang J

DOI: 10.1021/acsami.6c10792
Published: 2026 Sep 4
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c10792,
  title = {Ultrahigh On/Off Ratio Oxide Transistors via Noncoplanar Schottky-Ohmic Contacts.},
  author = {Li D and Peng C and Xu M and Shen M and Cai J and Wu W and Pan X and Zou R and Chen L and Dong H and Li J and Li X and Zhang J},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c10792},
  url = {https://doi.org/10.1021/acsami.6c10792}
}

RIS

TY  - JOUR
TI  - Ultrahigh On/Off Ratio Oxide Transistors via Noncoplanar Schottky-Ohmic Contacts.
AU  - Li D
AU  - Peng C
AU  - Xu M
AU  - Shen M
AU  - Cai J
AU  - Wu W
AU  - Pan X
AU  - Zou R
AU  - Chen L
AU  - Dong H
AU  - Li J
AU  - Li X
AU  - Zhang J
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c10792
UR  - https://doi.org/10.1021/acsami.6c10792
ER  -

APA

D, L., C, P., M, X., M, S., J, C., W, W., X, P., R, Z., L, C., H, D., J, L., X, L., & J, Z. (2026). Ultrahigh On/Off Ratio Oxide Transistors via Noncoplanar Schottky-Ohmic Contacts.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c10792

Source records

pubmed · retrieved 2026-09-24T23:50:40.165Z