Room-Temperature Radical-Complexation Wet Etch Chemistry Demonstrated on VO2.

Choi HY, McGowen L, Park KH, Kang DJ.

DOI: 10.1021/acsami.6c11371
Published: 2026-08-01
Container: ACS Appl Mater Interfaces
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c11371,
  title = {Room-Temperature Radical-Complexation Wet Etch Chemistry Demonstrated on VO2.},
  author = {Choi HY and  McGowen L and  Park KH and  Kang DJ.},
  year = {2026},
  journal = {ACS Appl Mater Interfaces},
  doi = {10.1021/acsami.6c11371},
  url = {https://doi.org/10.1021/acsami.6c11371}
}

RIS

TY  - JOUR
TI  - Room-Temperature Radical-Complexation Wet Etch Chemistry Demonstrated on VO2.
AU  - Choi HY
AU  -  McGowen L
AU  -  Park KH
AU  -  Kang DJ.
PY  - 2026
JO  - ACS Appl Mater Interfaces
DO  - 10.1021/acsami.6c11371
UR  - https://doi.org/10.1021/acsami.6c11371
ER  -

APA

HY, C., L, M., KH, P., & DJ., K. (2026). Room-Temperature Radical-Complexation Wet Etch Chemistry Demonstrated on VO2.. ACS Appl Mater Interfaces. https://doi.org/10.1021/acsami.6c11371

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europe-pmc · retrieved 2026-09-25T03:35:04.500Z