Low Resistivity Scaling of RuAl-Based Medium-to-High-Entropy Intermetallic Compounds as Potential Interconnect Metallization.

Fang YY, Tsai CY, Chien WZ, Jhan DJ, Lu MY, Tsou NT, Chang SY

Open source

DOI
10.1021/acsami.6c12263
Published
2026 Aug 19
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsami.6c12263,
  title = {Low Resistivity Scaling of RuAl-Based Medium-to-High-Entropy Intermetallic Compounds as Potential Interconnect Metallization.},
  author = {Fang YY and Tsai CY and Chien WZ and Jhan DJ and Lu MY and Tsou NT and Chang SY},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c12263},
  url = {https://doi.org/10.1021/acsami.6c12263}
}

RIS

TY  - JOUR
TI  - Low Resistivity Scaling of RuAl-Based Medium-to-High-Entropy Intermetallic Compounds as Potential Interconnect Metallization.
AU  - Fang YY
AU  - Tsai CY
AU  - Chien WZ
AU  - Jhan DJ
AU  - Lu MY
AU  - Tsou NT
AU  - Chang SY
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c12263
UR  - https://doi.org/10.1021/acsami.6c12263
ER  - 

APA

YY, F., CY, T., WZ, C., DJ, J., MY, L., NT, T., & SY, C. (2026). Low Resistivity Scaling of RuAl-Based Medium-to-High-Entropy Intermetallic Compounds as Potential Interconnect Metallization.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c12263

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