Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.

Liu X, Miao H, Tang L, Zhao S, Miao J, He X, Shan F, Yang Z

Open source

DOI
10.1021/acsami.6c12619
Published
2026 Sep 9
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsami.6c12619,
  title = {Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.},
  author = {Liu X and Miao H and Tang L and Zhao S and Miao J and He X and Shan F and Yang Z},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c12619},
  url = {https://doi.org/10.1021/acsami.6c12619}
}

RIS

TY  - JOUR
TI  - Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.
AU  - Liu X
AU  - Miao H
AU  - Tang L
AU  - Zhao S
AU  - Miao J
AU  - He X
AU  - Shan F
AU  - Yang Z
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c12619
UR  - https://doi.org/10.1021/acsami.6c12619
ER  - 

APA

X, L., H, M., L, T., S, Z., J, M., X, H., F, S., & Z, Y. (2026). Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c12619

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