Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.
- DOI
- 10.1021/acsami.6c12619
- Published
- 2026 Sep 9
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c12619,
title = {Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.},
author = {Liu X and Miao H and Tang L and Zhao S and Miao J and He X and Shan F and Yang Z},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c12619},
url = {https://doi.org/10.1021/acsami.6c12619}
}RIS
TY - JOUR TI - Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction. AU - Liu X AU - Miao H AU - Tang L AU - Zhao S AU - Miao J AU - He X AU - Shan F AU - Yang Z PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c12619 UR - https://doi.org/10.1021/acsami.6c12619 ER -
APA
X, L., H, M., L, T., S, Z., J, M., X, H., F, S., & Z, Y. (2026). Over Tenfold Increase in Contact Resistance with Scaling of MoS2 FETs: Multidimensional Constraints from Contact Length Reduction.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c12619
Source records
- pubmed · retrieved 2026-09-26T12:02:26.471Z