Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.

Lang S, Xu X, Shi K, Song S, Guo S, Zhang H, Lyu J, Gong J

Open source

DOI
10.1021/acsami.6c13925
Published
2026 Sep 21
Container
ACS applied materials & interfaces
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsami.6c13925,
  title = {Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.},
  author = {Lang S and Xu X and Shi K and Song S and Guo S and Zhang H and Lyu J and Gong J},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c13925},
  url = {https://doi.org/10.1021/acsami.6c13925}
}

RIS

TY  - JOUR
TI  - Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.
AU  - Lang S
AU  - Xu X
AU  - Shi K
AU  - Song S
AU  - Guo S
AU  - Zhang H
AU  - Lyu J
AU  - Gong J
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c13925
UR  - https://doi.org/10.1021/acsami.6c13925
ER  - 

APA

S, L., X, X., K, S., S, S., S, G., H, Z., J, L., & J, G. (2026). Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c13925

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