Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.
- DOI
- 10.1021/acsami.6c13925
- Published
- 2026 Sep 21
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c13925,
title = {Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.},
author = {Lang S and Xu X and Shi K and Song S and Guo S and Zhang H and Lyu J and Gong J},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c13925},
url = {https://doi.org/10.1021/acsami.6c13925}
}RIS
TY - JOUR TI - Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing. AU - Lang S AU - Xu X AU - Shi K AU - Song S AU - Guo S AU - Zhang H AU - Lyu J AU - Gong J PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c13925 UR - https://doi.org/10.1021/acsami.6c13925 ER -
APA
S, L., X, X., K, S., S, S., S, G., H, Z., J, L., & J, G. (2026). Doping-Free Cold-Source Contacts for BSb/InSe van der Waals Transistors with Sub-60 mV/Decade Subthreshold Swing.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c13925
Source records
- pubmed · retrieved 2026-09-26T07:52:34.004Z