Ga2O3-Engineered Buried-Channel Transport in Amorphous IGZO Thin-Film Transistors with Improved Mobility and Reliability for DRAM Cell Applications
- DOI
- 10.1021/acsami.6c14070
- Published
- 2026-09-28
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c14070,
title = {Ga2O3-Engineered Buried-Channel Transport in Amorphous IGZO Thin-Film Transistors with Improved Mobility and Reliability for DRAM Cell Applications},
author = {Taeyoon Lee and Kwanwoo Song and Jeewon Bu and Youngmin Kim and Jun Hoe Heo and Jiwan Kim and Ho Won Jang},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.6c14070},
url = {https://doi.org/10.1021/acsami.6c14070}
}RIS
TY - JOUR TI - Ga2O3-Engineered Buried-Channel Transport in Amorphous IGZO Thin-Film Transistors with Improved Mobility and Reliability for DRAM Cell Applications AU - Taeyoon Lee AU - Kwanwoo Song AU - Jeewon Bu AU - Youngmin Kim AU - Jun Hoe Heo AU - Jiwan Kim AU - Ho Won Jang PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.6c14070 UR - https://doi.org/10.1021/acsami.6c14070 ER -
APA
Lee, T., Song, K., Bu, J., Kim, Y., Heo, J. H., Kim, J., & Jang, H. W. (2026). Ga2O3-Engineered Buried-Channel Transport in Amorphous IGZO Thin-Film Transistors with Improved Mobility and Reliability for DRAM Cell Applications. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c14070
Source records
- crossref · retrieved 2026-09-27T10:45:36.038Z