High- <i>k</i> Gate Dielectrics for Organic Field-Effect Transistors: Interfacial Engineering, Performance Optimization, and Scalable Flexible Electronics
- DOI
- 10.1021/acsami.6c14631
- Published
- 2026-10-26
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c14631,
title = {High-
<i>k</i>
Gate Dielectrics for Organic Field-Effect Transistors: Interfacial Engineering, Performance Optimization, and Scalable Flexible Electronics},
author = {Yu Wang and Xi Li and Tianyu Yu and Fei Cheng and Ruotong Jin and Xianlian Lin and Xia Li and Heqing Ye and Zhenguo Liu},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.6c14631},
url = {https://doi.org/10.1021/acsami.6c14631}
}RIS
TY - JOUR
TI - High-
<i>k</i>
Gate Dielectrics for Organic Field-Effect Transistors: Interfacial Engineering, Performance Optimization, and Scalable Flexible Electronics
AU - Yu Wang
AU - Xi Li
AU - Tianyu Yu
AU - Fei Cheng
AU - Ruotong Jin
AU - Xianlian Lin
AU - Xia Li
AU - Heqing Ye
AU - Zhenguo Liu
PY - 2026
JO - ACS Applied Materials & Interfaces
DO - 10.1021/acsami.6c14631
UR - https://doi.org/10.1021/acsami.6c14631
ER - APA
Wang, Y., Li, X., Yu, T., Cheng, F., Jin, R., Lin, X., Li, X., Ye, H., & Liu, Z. (2026). High- <i>k</i> Gate Dielectrics for Organic Field-Effect Transistors: Interfacial Engineering, Performance Optimization, and Scalable Flexible Electronics. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c14631
Source records
- crossref · retrieved 2026-11-06T23:16:38.362Z